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STK12C68 데이터시트(PDF) 8 Page - Cypress Semiconductor

부품명 STK12C68
상세설명  64 Kbit (8K x 8) AutoStore nvSRAM
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STK12C68
Document Number: 001-51027 Rev. **
Page 8 of 20
Data Retention and Endurance
Parameter
Description
Min
Unit
DATAR
Data Retention
100
Years
NVC
Nonvolatile STORE Operations
1,000
K
Capacitance
In the following table, the capacitance parameters are listed.[6]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 0 to 3.0 V
8pF
COUT
Output Capacitance
7pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.[6]
Parameter
Description
Test Conditions
28-SOIC
28-PDIP
(300 mil)
28-PDIP
(600 mil)
28-CDIP
28-LCC
Unit
Θ
JA
Thermal Resis-
tance
(Junction to
Ambient)
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per EIA /
JESD51.
46.55
45.16
55.84
46.1
95.31
°C/W
Θ
JC
Thermal Resis-
tance
(Junction to Case)
27.95
31.62
25.74
5.01
9.01
°C/W
Figure 6. AC Test Loads
AC Test Conditions
5.0V
Output
30 pF
R1 963
Ω
R2
512
Ω
5.0V
Output
5 pF
R1 963
Ω
R2
512
Ω
For Tri-state Specs
Input Pulse Levels .................................................. 0 V to 3 V
Input Rise and Fall Times (10% to 90%) ...................... <5 ns
Input and Output Timing Reference Levels .......................1.5
Note
6. These parameters are guaranteed by design and are not tested.
[+] Feedback


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