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BDX54B 데이터시트(PDF) 3 Page - Motorola, Inc |
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BDX54B 데이터시트(HTML) 3 Page - Motorola, Inc |
3 / 6 page BDX53B BDX53C BDX54B BDX54C 3 Motorola Bipolar Power Transistor Device Data Figure 4. Thermal Response t, TIME OR PULSE WIDTH (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 R θJC(t) = r(t) RθJC R θJC = 1.92°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 SINGLE PULSE 0.2 0.05 0.1 0.02 0.01 SINGLE PULSE 0.03 0.3 3.0 30 300 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 Figure 5. Active–Region Safe Operating Area 20 2.0 0.05 10 20 100 TJ = 150°C 0.2 5.0 0.5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 30 70 1.0 0.1 dc 2.0 50 3.0 5.0 7.0 5.0 ms 1.0 ms 100 µs BDX53B, BDX54B BDX53C, BDX54C CURVES APPLY BELOW RATED VCEO 0.02 500 µs There are two limitations on the power handling ability of a transistor average junction temperature and second break- down. Safe operating area curves indicate IC –VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150_C. TJ(pk) may be calculated from the data in Fig- ure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 1.0 Figure 6. Small-Signal Current Gain f, FREQUENCY (kHz) 10 2.0 5.0 10 20 50 100 200 1000 500 300 100 5000 20 3000 200 500 2000 1000 30 50 TJ = 25°C VCE = 3.0 V IC = 3.0 A 300 0.1 Figure 7. Capacitance VR, REVERSE VOLTAGE (VOLTS) 30 1.0 2.0 5.0 20 100 10 200 100 70 50 TJ = + 25°C Cib Cob 50 0.2 0.5 PNP NPN PNP NPN |
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