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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AD8264-EVALZ 데이터시트(PDF) 6 Page - Analog Devices |
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AD8264-EVALZ 데이터시트(HTML) 6 Page - Analog Devices |
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6 / 40 page  AD8264 Rev. 0 | Page 6 of 40 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Voltage Supply Voltage (VPOS, VNEG) ±6 V Input Voltage (INPx) VPOS, VNEG Gain Voltage (GNHx, GNLO) VPOS, VNEG Power Dissipation 2.5 W Temperature Operating Temperature Range −40°C to +105°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C Package Glass Transition Temperature (TG) 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. The θJA values in Table 3 assume a 4-layer JEDEC standard board with zero airflow. Table 3. Thermal Resistance Package Type θJA θJC Unit 40-Lead LFCSP1 31.0 2.3 °C/W 1 4-Layer JEDEC board (2S2P). MAXIMUM POWER DISSIPATION The maximum safe power dissipation for the AD8264 is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the properties of the plastic change. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the amplifiers. Exceeding a temperature of 150°C for an extended period can cause changes in silicon devices, potentially resulting in a loss of functionality. ESD CAUTION |
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