©2009 Fairchild Semiconductor Corporation

1

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FSB50550U Rev. A

February 2009

FSB50550U

Features

high voltage integrated circuit (HVIC)

• 3 divided negative dc-link terminals for inverter current sens-

ing applications

• HVIC for gate driving and undervoltage protection

• 3/5V CMOS/TTL compatible, active-high interface

• Optimized for low electromagnetic interference

• Isolation voltage rating of 1500Vrms for 1min.

General Description

FRFET technology as a compact inverter solution for small

power motor drive applications such as fan motors and water

suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),

and 3 half-bridge HVICs for FRFET gate driving. FSB50550U

provides low electromagnetic interference (EMI) characteristics

with optimized switching speed. Moreover, since it employs

FRFET as a power switch, it has much better ruggedness and

larger safe operation area (SOA) than that of an IGBT-based

power module or one-chip solution. The package is optimized

for the thermal performance and compactness for the use in the

built-in motor application and any other application where the

assembly space is concerned. FSB50550U is the most solution

for the compact inverter providing the energy efficiency,

compactness, and low electromagnetic interference.

Absolute Maximum Ratings

Symbol

Parameter

Conditions

Rating

Units

DC Link Input Voltage,

Drain-source Voltage of each FRFET

500

V

Each FRFET Drain Current, Continuous

2.0

A

Each FRFET Drain Current, Continuous

1.5

A

Each FRFET Drain Current, Peak

5

A

Maximum Power Dissipation

14.5

W

Control Supply Voltage

20

V

High-side Bias Voltage

20

V

Input Signal Voltage

Applied between IN and COM

-0.3 ~ VCC+0.3

V

Operating Junction Temperature

-40 ~ 150

°C

Storage Temperature

-50 ~ 150

°C

Junction to Case Thermal Resistance

Each FRFET under inverter operating con-

dition (Note 1)

8.6

°C/W

Isolation Voltage

60Hz, Sinusoidal, 1 minute, Connection

pins to heatsink

1500