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STM32F103RBH7TR 데이터시트(Datasheet) 52 Page - STMicroelectronics

부품명 STM32F103RBH7TR
상세내용  Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
PDF  92 Pages
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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Electrical characteristics
STM32F103x8, STM32F103xB
52/92
Doc ID 13587 Rev 11
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 9.
Table 24.
HSI oscillator characteristics(1)
1.
VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
1(3)
3.
Guaranteed by design, not tested in production.
%
Factory-
calibrated(4)
4.
Based on characterization, not tested in production.
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)
(4)
HSI oscillator
startup time
12
µs
IDD(HSI)
(4)
HSI oscillator power
consumption
80
100
µA
Table 25.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(2)
2.
Based on characterization, not tested in production.
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
µs
IDD(LSI)
(3)
LSI oscillator power consumption
0.65
1.2
µA




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