전자부품 데이터시트 검색엔진 |
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DL221 데이터시트(PDF) 5 Page - Silicon Touch Technology Inc. |
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DL221 데이터시트(HTML) 5 Page - Silicon Touch Technology Inc. |
5 / 6 page 42-DL221 點晶科技股份有限公司 點晶科技股份有限公司 點晶科技股份有限公司 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. SP-DL221-A.005.doc -4- Version : : : :A.005 REQUIREMENTS FOR WAFER DELIVERY Material: Silicon with P-Substrate Diameter: 6 inches(≒15cm) Thickness: 15 mils(≒375um) Malfunctioned die:Marked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL221. (2) Process 42-DL221 in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL221 with bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL221 should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 23±3℃ Relative Humidity = 50±10% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL221 is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. |
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