BCX19LT1G datasheet(1/4 Pages) ONSEMI

부품명	BCX19LT1G

상세설명	General Purpose Transistors

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August, 2009 − Rev. 0

1

Publication Order Number:

BCX18LT1/D

BCX18LT1G, PNP

BCX19LT1G, NPN

General Purpose

Transistors

Voltage and Current are Negative for

PNP Transistors

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

BCX19LT1

BCX18LT1

VCEO

45

25

Vdc

Collector − Base Voltage

BCX19LT1

BCX18LT1

VCBO

50

30

Vdc

Emitter − Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

IC

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 1), TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

PNP

NPN

http://onsemi.com

1

xx M G

G

(Note: Microdot may be in either location)

xx

= T2 or U1

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

1

BASE

2

EMITTER

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