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ACT108-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 21 October 2009 6 of 12 NXP Semiconductors ACT108-600E AC Thyristor power switch 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD =12V; IT = 100 mA; LD+ G-; 1- 10 mA VD =12V; IT = 100 mA; LD- G-; Tj =25°C 1 - 10 mA IL latching current VD =12V; IG =12mA; Tj =25 °C; --30 mA IH holding current -9 25 mA VT on-state voltage --1.3 V VGT gate trigger voltage VD =600 V; IT = 100 mA; Tj ≤ 125 °C 0.15 - - V VD =600 V; IT = 100 mA; Tj = 25 °C --1 V ID off-state current VD =600 V; Tj ≤ 125 °C - - 0.2 mA VD =600 V; Tj ≤ 25 °C --2 µA dVD/dt rate of rise of off-state voltage VDM =402 V; Tj = 125 °C; gate open circuit; see Figure 10 1000 - - V/µs dIcom/dt rate of change of commutating current VD =400 V; Tj = 125 °C; IT(RMS) =1A; dVcom/dt = 15 V/µs; gate open circuit; 0.3 - - A/ms VCL clamping voltage ICL = 100 mA; tp =1ms; Tj ≤ 125 °C; 650 - - V Fig 6. Normalized gate trigger current as a function of junction temperature Fig 7. Normalized latching current as a function of junction temperature IGT IGT(25°C) Tj (°C) −50 0 150 100 50 1 2 3 0 003aac809 (1) (2) (1) (2) Tj (°C) −50 150 100 050 003aac811 1 2 3 0 IL IL(25°C) |
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