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TS4148RY 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

부품명 TS4148RY
상세설명  400mW High Speed SMD Switching Diode
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS4148RY 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TS4148 RY
400mW High Speed SMD Switching Diode
Small Signal Diode
Extremely thin/leadless package
High mounting capability,strong surage with stand,
high reliability.
Pb free version and RoHS compliant
Case :0805 standard package, molded plastic
Min
Max
Min
Max
1.80
2.20
0.071 0.086
1.05
1.45
0.410 0.570
0.25
0.65
0.010 0.026
0.75
0.95
0.029 0.037
1.30
0.90
0.051 0.034
Package
0805
Maximum Ratings
Electrical Characteristics
Reverse Breakdown Voltage
(Note 2)
Forward Voltage
IF=
10mA
VR=
20V
VR=
75V
Junction Capacitance
VR=0, f=1.0MHz
Reverse Recovery Time
(Note3)
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : IF=10mA, IR=1mA,RL=100Ω
Dimensions
Ordering Information
Part No.
Packing
C
E
A
B
nA
μA
300
Value
400
5
A
Units
mW
V
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Power Dissipation
Symbol
5Kpcs / 7" Reel
TS4148 RY
Repetitive Peak Forward Current
Polarity : Indicated by cathode band
Weight : 0.006 gram (approximately)
IFRM
Non-Repetitive Peak Reverse Voltage
VRSM
Rating at 25°C ambient temperature unless otherwise specified.
100
V
Designed for mounting on small surface.
Non-Repetitive Peak Forward Surge Current
Mean Forward Current
25
1.00
Thermal Resistance (Junction to Ambient) (Note 1)
Repetitive Peak Reverse Voltage
PD
VRRM
Type Number
0805
Maximum Ratings and Electrical Characteristics
Features
Mechanical Data
Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
Unit (mm)
Unit (inch)
D
High temperature soldering guaranteed: 260°C/10s
Trr
ns
-
4.0
CJ
4
-
IR
pF
Junction and Storage Temperature Range
Reverse Leakage Current
Min
-65 to + 175
Type Number
Symbol
VF
°C
TJ, TSTG
-
-
V
75
mA
mA
0.5
2.0
°C/W
Units
V
Max
375
IO
150
Tp=1sec square waveform
V(BR)
IFSM
8.3ms single half sine waveform
RθJA
75
B
A
C
E
D
Version : E09


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