전자부품 데이터시트 검색엔진 |
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VG26VS17400E 데이터시트(PDF) 8 Page - Vanguard International Semiconductor |
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VG26VS17400E 데이터시트(HTML) 8 Page - Vanguard International Semiconductor |
8 / 25 page Document : 1G5-0142 Rev.1 Page 8 VIS VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM DC Characteristics ; 3.3 - Volt Verion (Ta = 0 to 70°C, VCC = + 3.3V 10%, Vss = 0V) Parameter Symbol Test Conditions VG26 (V) (S) 17400E Unit Notes -5 -6 Min Max Min Max Operating current ICC1 RAS cycling CAS cycling tRC = min. - 110 - 100 mA 1, 2 Standby Current Low power S - version ICC2 LVTTL interface RAS, CAS = VIH Dout = high - Z - 0.5 - 0.5 mA CMOS interface - 0.2V Dout = high - Z - 0.25 - 0.25 mA Standard power version LVTTL interface RAS, CAS = VIH Dout = high - Z - 2 - 2 mA CMOS interface - 0.2V Dout = high - Z - 0.5 - 0.5 mA RAS - only refresh current ICC3 RAS cycling, CAS = VIH tRC = min. - 110 - 100 mA 1, 2 Fast page mode current ICC4 tPC = min. - 80 - 70 mA 1,3 CAS - before - RAS refresh current ICC5 tRC = min. RAS, CAS cycling - 110 - 100 mA 1, 2 Self - refresh currant (S - Version) ICC8 - 250 - 250 CAS - before - RAS long refresh current (S - Version) ICC9 Standby : VCC - CAS before RAS refresh : 2048 cycles/128ms RAS, RAS : VCC - (Max) Dout = high - Z, - 300 - 300 ± RAS CAS , V CC ≥ RAS CAS , V CC ≥ t RASS 100 µS ≥ µA 0.2V RAS ≤ 0V V I L 0.2V ≤ ≤ 0.2V V IH V IH ≤ ≤ t RAS 300ns ≤ µA |
유사한 부품 번호 - VG26VS17400E |
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유사한 설명 - VG26VS17400E |
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