2SD2114K datasheet(2/5 Pages) ROHM

부품명	2SD2114K

상세설명	High-current Gain Medium Power Transistor (20V, 0.5A)

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제조업체	ROHM [Rohm]

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2SD2114K / 2SD2144S

Transistors

Rev.B

2/4

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT

∗

Cob

Min.

25

20

12

−

0.18

350

8.0

−

0.5

0.4

−

V

IC

=10µA

IC

=1mA

IE

=10µA

VCB

=20V

VEB

=10V

IC/IB

=500mA/20mA

VCE

=10V, IE= −50mA, f=100MHz

VCB

=10V, IE=0A, f=1MHz

V

µA

hFE

820

−

2700

VCE

=3V, IC=10mA

−

V

MHz

pF

Ron

−

0.8

−

IB

=1mA, Vi=100mV(rms), f=1kHz

Ω

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Output On-resistance

∗ Measured using pulse current

Packaging specifications and hFE

Package

Code

T146

TP

3000

5000

−

Taping

Basic ordering

unit (pieces)

VW

hFE

VW

2SD2114K

2SD2144S

Type

hFE values are classified as follows :

Item

hFE

V

820 to 1800

W

1200 to 2700

Electrical characteristic curves

0

0.4

0.8

1.2

1.6

2.0

0

0.1

0.2

0.3

0.4

0.5

Ta

=25°C

0.2

µA

0.4

µA

0.6

µA

0.8

µA

1.0

µA

1.2

µA

1.4

µA

1.6

µA

IB

=0

1.8

µA

2.0

µA

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.1 Grounded emitter output

characteristics ( )

0

200

400

600

800

1000

02468

10

Ta

=25

°C

Measured using

pulse current.

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA

1.8mA 2.0mA

IB

=0mA

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2 Grounded emitter output

characteristics (

)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1

2

5

10

20

50

100

200

500

1000

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.3 Grounded emitter propagation

characteristics

VCE

=3V

Measured using

pulse current.

25

°C

−25°C

Ta

=100°C

유사한 부품 번호 - 2SD2114K

제조업체	부품명	데이터시트	상세설명
Rohm	2SD2114K	132Kb / 4P	High-current Gain MediumPower Transistor (20V, 0.5A)
Rohm	2SD2114K	99Kb / 5P	High-current Gain Medium Power Transistor (20V, 0.5A)
Guangdong Kexin Industr...	2SD2114K	36Kb / 1P	Power Transistor
Rohm	2SD2114K	164Kb / 4P	High-current Gain Medium Power Transistor
Rohm	2SD2114K	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)

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유사한 설명 - 2SD2114K

제조업체	부품명	데이터시트	상세설명
Rohm	2SD2144STPU	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114KT146W	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114KT146V	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114K	99Kb / 5P	High-current Gain Medium Power Transistor (20V, 0.5A)
List of Unclassifed Man...	2SD2144	132Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S
Rohm	2SD2114K	132Kb / 4P	High-current Gain MediumPower Transistor (20V, 0.5A)
Diodes Incorporated	ZXTP25020DG	581Kb / 7P	20V PNP MEDIUM POWER HIGH GAIN TRANSISTOR
Rohm	2SD2114K	164Kb / 4P	High-current Gain Medium Power Transistor
Diodes Incorporated	FZT689B	684Kb / 7P	20V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223
SeCoS Halbleitertechnol...	PZT987A	1Mb / 2P	Medium Power High Gain Transistor

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2SD2114K 데이터시트(PDF) 2 Page - Rohm

2SD2114K 데이터시트(HTML) 2 Page - Rohm

유사한 부품 번호 - 2SD2114K

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