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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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CSD17303Q5 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD17303Q5 데이터시트(HTML) 1 Page - Texas Instruments |
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1 / 9 page  1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 TC = 25°C TC = 125°C G006 ID = 25A Qg - Gate Charge - nC 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 G003 ID = 25A VDS = 15V CSD17303Q5 www.ti.com SLPS246A – JANUARY 2010 – REVISED FEBRUARY 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17303Q5 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V • Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 4 nC • Avalanche Rated VGS = 3V 2.7 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V 2 m Ω • Pb Free Terminal Plating VGS = 8V 1.7 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.1 V • Halogen Free • SON 5-mm × 6-mm Plastic Package text text APPLICATIONS ORDERING INFORMATION • Notebook Point-of-Load Device Package Media Qty Ship SON 5-mm × 6-mm 13-Inch Tape and • Point-of-Load Synchronous Buck in CSD17303Q5 2500 Plastic Package Reel Reel Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications text text DESCRIPTION ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, VDS Drain to Source Voltage 30 V and optimized for 5V gate drive applications. VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A ID Top View Continuous Drain Current(1) 32 A IDM Pulsed Drain Current, TA = 25°C (2) 200 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 530 mJ ID = 103A, L = 0.1mH, RG = 25Ω (1) RqJA = 39°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2%" RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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