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MV39001-P2715 데이터시트(PDF) 1 Page - Microsemi Corporation

부품명 MV39001-P2715
상세설명  GaAs VARACTORS TM Hyperabrupt Flip Chip Diodes
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

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MV39001 – MV39003
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs VARACTORS
Hyperabrupt Flip Chip Diodes
TM
®
Dimensions
Copyright
 2008
Rev: 2009-01-19
Reverse Voltage
18 V
Power Dissipation
50 mW @ 25°C
Operating Temperature
-65°C to +150°C
Storage Temperature
-65°C to +150°C
Size: 27.5 x 15 x 5 mils
Features
High Q GaAs Material
1.0 and 1.25 Constant Gamma Varactors
Low Parasitic Capacitance (0.02 pF)
Large Gold Bond Pads (3.5 x 8.4 mils)
Silicon Nitride Protective Coating
Maximum Ratings
Description
Microsemi’s Flip Chip GaAs Varactors are designed
for use as tuning elements in VCOs, modulators and
tunable filters at microwave and millimeter wave
frequencies.
These Flip Chip Varactors incorporate our expertise
in
GaAs
material
processing,
silicon
nitride
protective
coating
and
high
temperature
metallization. This flip chip design maintains the
high frequency performance of a beam lead
structure in a more rugged configuration.
Specifications @ 25°C
SPICE Model Parameters
CJO (pF)
m
IS
(A)
RS
(
)
N
CP
(pF)
MV39001 MV39002 MV39003
MV39001 MV39002 MV39003
EG
(ev)
VJ
(V)
BV
(V)
IBV
(A)
1E-14 A
0
1.0
0.02
2.0
1.8
2.8
1.0
1.25
1.25
1.42
1.2
18
1E-5 A
Part Number
Gamma
±10%
CT @ 4 V
(pF)
CT @2 V /
CT @12 V
Min.
Q @ 4 V
50 MHz
Min.
Breakdown
Voltage
Max.
Reverse
Current
MV39001-P2715
1.00
0.4–0.6
3.3–4.1
4000
18 V @ 10 µA
100 nA @ 14.4 V
MV39002-P2715
1.25
0.25–0.4
4.3–5.3
4000
18 V @ 10 µA
100 nA @ 14.4 V
MV39003-P2715
1.25
0.4–0.6
4.5–5.6
3500
18 V @ 10 µA
100 nA @ 14.4 V


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