MV20001 – MV21010

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

GaAs Varactor Diodes

Abrupt Junction

TM

®

Copyright

 2008

Rev: 2009-05-11

Features

●

High Q Values for Higher Frequency Performance

●

Constant Gamma Design

●

Low Reverse Current

●

Available as Chip or Packaged Diodes

●

Available in Chip-on-Board Packaging

●

Custom Designs Available

Applications

●

VCOs

●

Phase-Locked Oscillators

●

High Q Tunable Filters

●

Phase Shifters

●

Pre-Selectors

Maximum Ratings

Description

Microsemi’s GaAs abrupt junction varactors are

fabricated from

epitaxial

layers

grown

at

Microsemi using Chemical Vapor Deposition. The

layers are processed

using proprietary techniques

resulting

in a high Q factor and very repeatable

tuning curves. The diodes are available in a variety

of microwave ceramic packages or chips for

operation

from

UHF

to

millimeter

wave

frequencies.

Reverse Voltage

Breakdown Voltage

Forward Current

50 mA @ 25°C

Incident Power

+20 dBm @ 25°C

Operating Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

IMPORTANT:

Specifications are subject to change. Consult factory for the latest information

.

These devices are ESD sensitive and must be handled using ESD precautions.

supplied with a RoHS complaint Gold finish

.