BC556 datasheet(2/2 Pages) RECTRON

부품명	BC556

상세설명	PNP Planar Epitaxial Transistor

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Transition Frequency

fT

IC = 10mA, VCE = 5V

f = 100MHz

-150

-

MHz

Collector Output Capacitance

VCBO

VCB = 10V, f = 1MHz

--

6

pF

Nose Figure

NF

VCE = 5V, IC = 0.2mA

RS N I

.+]

B = 200 Hz

-2

10

dB

Characteristics Ratings

(at Ta = 25°C unless otherwise specified)

Dynamics Characteristics

Symbol

Test Conditions

min.

Typ.

max.

Unit

Collector Emitter Voltage

VCEO

IC = 2mA, IB=0

65

-

V

Collector Base voltage

VCBO

IC = 100uA, IE=0

80

-

V

Emitter Base Voltage

VEBO

IE = 100uA, IC=0

5-

-

V

Collector Cut off Current

ICBO

VCB = 30V, IE = 0

VCB = 30V, IE = 0, TJ = 150°C

-

0.2

-

15

4

nA

uA

Collector Cut off Current

ICES

VCE = 80V

VCE = 80V, TJ = 125°C

-

0.2

-

15

4

nA

uA

DC Current Gain

hFE

VCE = 5V. IC = 2mA

75

475

Collector Emitter Saturation Voltage

VCE (SAT)

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

-

0.09

0.25

0.3

0.65

V

Base Emitter Saturation Voltage

VBE (SAT)

IC = 10mA, IB = 0.5mA

IC = 100mA, IB= 5mA

-

0.7

0.9

-

V

Base Emitter on Voltage

VBE (SAT)

IC = 2mA, VCE = 5V

IC = 10mA, VCE = 5V

0.55

-

0.66

-

0.7

0.82

V

유사한 부품 번호 - BC556

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	BC556	220Kb / 6P	Amplifier Transistors
Olitech Electronics Co....	BC556	791Kb / 4P	FEATURES
Fairchild Semiconductor	BC556	43Kb / 4P	Switching and Amplifier
Micro Commercial Compon...	BC556	294Kb / 5P	PNP Silicon Amplifier Transistor 625mW
ON Semiconductor	BC556	158Kb / 6P	Amplifier Transistors(PNP Silicon) 1996

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