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SSM20P02H 데이터시트(PDF) 1 Page - Silicon Standard Corp. |
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1 / 6 page www.SiliconStandard.com 1 of 6 SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -20V 2.5V gate drive capability RDS(ON) 52mΩ Fast switching ID -18A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W -55 to 150 Linear Derating Factor Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current, VGS @ 10V -14 Pulsed Drain Current 1 -50 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V -18 0.25 31.25 -55 to 150 Rating - 20 ± 12 G D S G D S TO-252(H) G D S TO-251(J) Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM20P02J) is available for low-profile applications. Rev.2.01 6/26/2003 |
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