SSM40P03GJ datasheet(2/5 Pages) SSC

부품명	SSM40P03GJ

상세설명	P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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제조업체	SSC [Silicon Standard Corp.]

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SSM40P03GH,J

2/16/2005 Rev.2.2

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

-

V

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-

-0.02

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=-10V, ID=-18A

-

28

m

Ω

VGS=-4.5V, ID=-14A

-

50

m

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-

V

gfs

Forward Transconductance

VDS=-10V, ID=-18A

-

20

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-

-1

uA

Drain-Source Leakage Current (Tj=150

oC)

VDS=-24V, VGS=0V

-

-25

uA

IGSS

Gate-Source Leakage

VGS= ±20V

-

nA

Qg

Total Gate Charge

2

ID=-18A

-

14

22

nC

Qgs

Gate-Source Charge

VDS=-24V

-

3

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

-

9

-

nC

td(on)

Turn-on Delay Time

2

VDS=-15V

-

12

-

ns

tr

Rise Time

ID=-18A

-

56

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=-10V

-

30

-

ns

tf

Fall Time

RD=0.8Ω

-57

-

ns

Ciss

Input Capacitance

VGS=0V

-

915

1465

pF

Coss

Output Capacitance

VDS=-25V

-

280

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

195

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

IS=-18A, VGS=0V

-

-1.2

V

trr

Reverse Recovery Time

2

IS=-18A, VGS=0V,

-

30

-

ns

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

-

21

-

nC

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

±100

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