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N-channel Enhancement-mode Power MOSFET

30V

12m

Ω

45A

The SSM60T03 acheives fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for low voltage applications such as DC/DC

Pb-free; RoHS-compliant TO-251 (IPAK)

PRODUCT SUMMARY

DESCRIPTION

Notes:

1.Pulse width must be limited to avoid exceeding the safe operating area.

2.Pulse width <300us, duty cycle <2%.

converters and general load-switching circuits.

The SSM60T03GH is in a TO-252 package, which is

widely used for commercial and industrial surface-mount

applications.

The through-hole version, the SSM60T03GJ in TO-251,

is available for vertical mounting, where a small footprint

and TO-252 (DPAK)

G

D S

TO-252 (suffix H)

G

D

S

TO-251 (suffix J)

is required on the board, and/or an external heatsink is

to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

The devices have a maximum junction temperature rating

of 175°C for improved thermal margin and reliability.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Units

V

A

W/°C

Single pulse avalanche energy

3

mJ

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-case

3.4

°C/W

Maximum thermal resistance, junction-ambient

110

°C/W

Drain-source voltage

30

V

Gate-source voltage

±20

45

A

32

A

Pulsed drain current

1

120

44

W

-55 to 175

°C

Operating junction temperature range

-55 to 175

°C

Linear derating factor

0.352

29

THERMAL CHARACTERISTICS

Storage temperature range

SSM60T03GH,J

10/16/2005 Rev.3.1