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SSM85T03GJ 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SSM85T03GJ 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
4 / 5 page www.SiliconStandard.com 4 of 5 SSM85T03GH,J 5/17/2005 Rev.2.3 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 10 12 14 0 102030 40506070 Q G , Total Gate Charge (nC) V DS =15V V DS =20V V DS =24V I D =30A 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1 10 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse DC 100ms 10ms 1ms |
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