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SSM9585GM 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SSM9585GM 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
4 / 5 page www.SiliconStandard.com 4 of 5 3/21/2005 Rev.2.01 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 010 20 30 40 Q G , Total Gate Charge (nC) I D = -2.7A V DS = -64V 10 100 1000 10000 1 5 9 131721 2529 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse SSM9585GM |
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