www.SiliconStandard.com

1 of 7

Dual N-channel Enhancement-mode Power MOSFETs

20V

30m

Ω

6A

The SSM9926GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

ABSOLUTE MAXIMUM RATINGS

W/°C

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient

3

62.5

°C/W

Symbol

Parameter

Value

Units

Drain-source voltage

20

V

Gate-source voltage

Continuous drain current

3

,

6

A

4.8

A

Pulsed drain current

1,2

26

A

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.016

Storage temperature range

Total power dissipation

2

W

-55 to 150

°C

THERMAL CHARACTERISTICS

± 12

V

Pb-free; RoHS-compliant SO-8

PRODUCT SUMMARY

DESCRIPTION

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 135°C/W when mounted on the minimum pad area required for soldering.

converters and general load-switching circuits.

The SSM9926GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

SSM9926GM

3/16/2006 Rev.3.01