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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SSM9928O 데이터시트(PDF) 1 Page - Silicon Standard Corp. |
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SSM9928O 데이터시트(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page  SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET 03/11/2007 Rev.1.00 www.SiliconStandard.com 1 PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Optimal DC/DC battery application DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 S2 S2 G2 D1 S1 S1 G1 TSSOP-8 S1 G1 D1 S2 G2 D2 BVDSS 20V RDS(ON) 23mΩ ID 5A Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 125 ℃/W Parameter Storage Temperature Range Total Power Dissipation 1 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.008 Drain Current 3, V GS @ 4.5V 3.5 Pulsed Drain Current 1 25 Gate-Source Voltage ±12 Drain Current 3, V GS @ 4.5V 5 Parameter Rating Drain-Source Voltage 20 AP9928EO THERMAL DATA |
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