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SSM9930M

10/21/2004 Rev.1.01

DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE

POWER MOSFETS

Simple drive requirement

N-CH

30V

Low on-resistance

33m

Ω

Full-bridge applications, such as

6.3A

LCD monitor inverter

P-CH

-30V

55m

Ω

Description

-5.1A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

± 25

±25

V

Continuous Drain Current

3

6.3

-5.1

A

Continuous Drain Current

3

4.2

-3.4

A

Pulsed Drain Current

1

20

-20

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Symbol

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Parameter

Thermal Data

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

N1G

N1D/P1D

N1S/N2S

N2G

P1G

P1S/P2S

N2D/P2D

P2G

SO-8

N1G

N1S

P1G

P1S

P1N1D

N2G

N2S

P2G

P2S

P2N2D

The SSM9930M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for applications such as low-voltage inverters and motor drives.