FMMT413 datasheet(1/2 Pages) ZETEX

부품명	FMMT413

상세설명	NPN SILICON PLANAR AVALANCHE TRANSISTOR

Download	2 Pages

Scroll/Zoom	100%

제조업체	ZETEX [Zetex Semiconductors]

홈페이지	http://www.diodes.com/

Logo

1 / 2 page

SOT23 NPN SILICON PLANAR

AVALANCHE TRANSISTOR

PROVISIONAL DATASHEET ISSUE 2 MARCH 1996

FEATURES

* Avalanche mode operation

* 50A Peak avalanche current

* Low inductance packaging

APPLICATIONS

* Laser LED drivers

* Fast edge generation

* High speed pulse generators

PARTMARKING DETAIL - 413

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

150

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6V

Continuous Collector Current

IC

100

mA

Peak Collector Current (25ns Pulse Width)

ICM

50

A

Power Dissipation

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Emitter

Breakdown Voltage

V(BR)CES

150

V

IC=100µA

Collector-Emitter

Breakdown Voltage

VCEO(sus)

50

V

IC=10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

6V

IE=100µA

Collector Cut-Off Current ICBO

0.1

µ

A

VCB=120V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.15

V

IC=10mA, IB=1mA

Base-Emitter

Saturation Voltage

VBE(sat)

0.8

V

IC=10mA, IB=1mA

Current in Second

Breakdown (Pulsed)

IUSB

22

31

A

VC=110V, CCE=4.7nF*

VC=130V, CCE=4.7nF*

Static Forward Current

Transfer Ratio

hFE

50

IC=10mA, VCE=10V

*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor

circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop

The FMMT413 device is a development product. Samples availability and release to production

scheduled for June 1996

FMMT413

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Emitter Inductance

Le

2.5

nH

Standard SOT23 leads

Transition Frequency

fT

150

MHz

IC=10mA, VCE=5V

f=20MHz

Collector-Base

Capacitance

Ccb

2pF

VCB=10V, IE=0

f=1MHz

.

20

10

0

40

50

30

V5 -

Supply Voltage (V)

CCE=2x4.7nF

050

100

150

200

250

CCE=4.7nF

CCE=2.2nF

CCE=1.0nF

Tamb=25°C

IB=5mA/ns

p.r.f.=10KHz

TYPICAL CHARACTERISTICS

C

B

E

SOT23

3 - 102

3 - 103

유사한 부품 번호 - FMMT413

제조업체	부품명	데이터시트	상세설명
Zetex Semiconductors	FMMT413	136Kb / 6P	SOT23 NPN silicon planar avalanche transistor
Diodes Incorporated	FMMT413	151Kb / 6P	SOT23 NPN silicon planar avalanche transistor
Zetex Semiconductors	FMMT413TA	136Kb / 6P	SOT23 NPN silicon planar avalanche transistor
Diodes Incorporated	FMMT413TA	151Kb / 6P	SOT23 NPN silicon planar avalanche transistor
Zetex Semiconductors	FMMT413TD	136Kb / 6P	SOT23 NPN silicon planar avalanche transistor

More results

유사한 설명 - FMMT413

제조업체	부품명	데이터시트	상세설명
Zetex Semiconductors	ZUMT413	54Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
	ZTX415	61Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
	FMMT415	97Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
Diodes Incorporated	ZTX413	72Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
Zetex Semiconductors	ZTX413	44Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
Diodes Incorporated	ZTX415	73Kb / 2P	NPN SILICON PLANAR AVALANCHE TRANSISTOR
	FMMT413	151Kb / 6P	SOT23 NPN silicon planar avalanche transistor
	FMMT415	108Kb / 2P	SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
	FMMT417TA	108Kb / 2P	SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
Zetex Semiconductors	FMMT413	136Kb / 6P	SOT23 NPN silicon planar avalanche transistor

More results

FMMT413 데이터시트(PDF) 1 Page - Zetex Semiconductors

FMMT413 데이터시트(HTML) 1 Page - Zetex Semiconductors

유사한 부품 번호 - FMMT413

유사한 설명 - FMMT413

Html Pages

1 2

데이터시트 다운로드

링크 URL