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74LVC3G34DC 데이터시트(PDF) 7 Page - NXP Semiconductors |
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74LVC3G34DC 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 74LVC3G34_7 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 07 — 9 May 2008 7 of 16 NXP Semiconductors 74LVC3G34 Triple buffer 11. Dynamic characteristics [1] Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of outputs. Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 8 [2] VCC = 1.65 V to 1.95 V 1.0 3.8 8.6 1.0 10.8 ns VCC = 2.3 V to 2.7 V 0.5 2.4 4.4 0.5 5.5 ns VCC = 2.7 V 0.5 2.5 5.0 0.5 6.3 ns VCC = 3.0 V to 3.6 V 0.5 2.2 4.1 0.5 5.1 ns VCC = 4.5 V to 5.5 V 0.5 1.9 3.2 0.5 4.0 ns CPD power dissipation capacitance VI = GND to VCC; VCC = 3.3 V [3] -14 ---pF |
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