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BAS16H 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BAS16H 데이터시트(HTML) 4 Page - NXP Semiconductors |
4 / 20 page BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 4 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current BAS16 [1] - 215 mA BAS16H BAS16L [2] - 215 mA BAS16T [1] - 155 mA BAS16VV BAS16VY [1][3] - 200 mA BAS16W [1] - 175 mA BAS16J BAS316 BAS516 [1] - 250 mA IFRM repetitive peak forward current tp ≤ 0.5 µs; δ≤ 0.25 - 500 mA IFSM non-repetitive peak forward current square wave [4] tp =1 µs- 4 A tp =1ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation BAS16 Tamb ≤ 25 °C [1] - 250 mW BAS16H Tamb ≤ 25 °C [2][5] [6] - 380 mW [5][6] [7] - 830 mW BAS16J Tamb ≤ 25 °C [5][6] [7] - 550 mW BAS16L Tamb ≤ 25 °C [2][5] [6] - 250 mW BAS16T Tsp ≤ 90 °C [1] - 170 mW BAS16VV Tamb ≤ 25 °C [1][3] [5][8] - 180 mW BAS16VY Tsp ≤ 85 °C [1][3] [8] - 250 mW BAS16W Tamb ≤ 25 °C [1] - 200 mW BAS316 Tsp ≤ 90 °C [1][6] - 400 mW BAS516 Tsp ≤ 90 °C [1][5] [6] - 500 mW |
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