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BAT754C 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAT754C 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Mar 25 3 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT754 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ ≤ 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA − 200 mV IF = 1 mA − 260 mV IF = 10 mA − 340 mV IF = 30 mA − 420 mV IF = 100 mA 600 − mV IR reverse current VR = 25 V; note 1; see Fig.7 − 2 μA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.8 − 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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