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BC846S 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BC846S 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1999 Sep 01 3 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S THERMAL CHARACTERISTICS Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 416 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector cut-off current IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V 110 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 100 mV IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 770 − mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz |
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