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Z00607MA,412 데이터시트(PDF) 7 Page - NXP Semiconductors |
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Z00607MA,412 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 12 page Z00607MA_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 26 February 2008 7 of 12 NXP Semiconductors Z00607MA Triac logic level 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max);Tj = 110 °C; exponential waveform; gate open circuit 30 45 - V/ µs dVcom/dt rate of change of commutating voltage VDM = VDRM(max); Tj =50 °C; ITM = 0.84 A; dIcom/dt = 0.3 A/ms -5 -V/ µs tgt gate-controlled turn-on time ITM = 1 A; VD =VDRM(max); IG =25mA; dIG/dt=5A/µs -2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ (4) T2 − G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −60 140 90 −10 40 003aaa039 0.8 0.4 1.2 1.6 0 VGT(25°C) VGT Tj (°C) −60 140 90 −10 40 003aaa030 1 2 3 0 (1) (2) (3) (4) (1) (2) (3) (4) IGT IGT(25°C) |
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