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BF1108R 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BF1108R
상세설명  Silicon RF switches
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

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BF1108_BF1108R_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
3 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
5.
Limiting values
6.
Thermal characteristics
[1]
Soldering point of FET gate and diode anode lead.
7.
Static characteristics
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
FET
VDS
drain-source voltage
-
3
V
VSD
source-drain voltage
-
3
V
VDG
drain-gate voltage
-
7
V
VSG
source-gate voltage
-
7
V
ID
drain current
-
10
mA
Diode
VR
reverse voltage
-
35
V
IF
forward current
-
100
mA
FET and diode
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to solder point
[1] 250
K/W
Table 7.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
FET
V(BR)GSS gate-source breakdown
voltage
VDS =0V; IGS = 0.1 mA
7
-
-
V
VGS(p)
gate-source pinch-off voltage
VDS =1V; ID =20 µA-
−3
−4V
IDSX
drain cut-off current
VGS = −5 V; VDS = 2 V
--10
µA
IGSS
gate leakage current
VGS = −5 V; VDS = 0 V
-
-
100
nA
RDSon
drain-source on-state
resistance
VGS =0V; ID = 1 mA
-
12
20
Diode
VF
forward voltage
IF = 10 mA
-
-
1
V
IR
reverse current
VR = 25 V
--50
nA
VR = 20 V; Tamb =75 °C
--1
µA


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