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ZTX789A 데이터시트(Datasheet) 1 Page - Zetex Semiconductors

부품명 ZTX789A
상세내용  PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
PDF  3 Pages
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제조사  ZETEX [Zetex Semiconductors]
홈페이지  http://www.diodes.com/
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PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – APRIL 94
FEATURES
* 25 Volt VCEO
* Gain of 200 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-8
A
Continuous Collector Current
IC
-3
A
Practical Power Dissipation*
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-25
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-25
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-0.1
µ
A
VCB=-15V
Emitter Cut-Off Current
IEBO
-0.1
µ
A
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.25
-0.45
-0.5
V
V
V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
250
200
100
800
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
E-Line
TO92 Compatible
ZTX789A
3-276
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF
VEB=-0.5V, f=1MHz
Output Capacitance
Cobo
25
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
400
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX789A
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-277




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