ZTX790A datasheet(1/3 Pages) ZETEX

부품명	ZTX790A

상세설명	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2 APRIL 94

FEATURES

* 40 Volt VCEO

* Gain of 200 at IC=1 Amps

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Siren driver

* Battery powered circuits

* Motor drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-6

A

Continuous Collector Current

IC

-2

A

Practical Power Dissipation*

Ptotp

1.5

W

Power Dissipation

at Tamb=25°C

derate above 25°C

Ptot

1

5.7

W

mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-50

V

IC=-100µA

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-40

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off Current

ICBO

-0.1

µ

A

VCB=-30V

Emitter Cut-Off Current

IEBO

-0.1

µ

A

VEB=-4V

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.25

-0.45

-0.75

V

IC=-500mA, IB=-5mA*

IC=-1A, IB=-10mA*

IC=-2A, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.0

V

IC=-1A, IB=-10mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-0.75

V

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

300

250

200

150

800

IC=-10mA, VCE=-2V

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

E-Line

TO92 Compatible

ZTX790A

3-279

C

B

E

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Transition Frequency

fT

100

MHz

IC=-50mA, VCE=-5V

f=50MHz

Input Capacitance

Cibo

225

pF

VEB=-0.5V, f=1MHz

Output Capacitance

Cobo

24

pF

VCB=-10V, f=1MHz

Switching Times

ton

toff

35

600

ns

IC=-500mA, IB1=-50mA

IB2=-50mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance: Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

Rth(j-amb)2

Rth(j-case)

175

116

70

°C/W

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX790A

-40

0.0001

Derating curve

T -Temperature (°C)

Maximum transient thermal impedance

Pulse Width (seconds)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t1

tP

D=t1/tP

1.0

0.5

2.0

1.5

Case

temperature

2.5

Ambient

temperat

ure

0

D=1 (D.C.)

3-280

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