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2SJ567 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SJ567
상세설명  TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ567 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SJ567
2009-07-13
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −200 V)
• Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
−200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
−2.5
Drain current
Pulse
(Note 1)
IDP
−10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
−2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A
RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.6 MAX.
0.6 MAX.
2.3
6.8 MAX.
0.95 MAX.
0.6
± 0.15
5.2
± 0.2
1
2
3
2.3
3
2
1
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
1.1
± 0.2
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
6.5
± 0.2
1
2
3
0.6 MAX.
0.6
± 0.15
2.3
± 0.15
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
3
2
1
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)


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