2SJ681 datasheet(1/6 Pages) TOSHIBA

부품명	2SJ681

상세설명	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SJ681

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

2SJ681

Relay Drive, DC−DC Converter and Motor Drive

Applications

4-V gate drive

Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)

High forward transfer admittance: |Yfs| = 5.0 S (typ.)

Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)

Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

−60

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

−60

V

Gate−source voltage

VGSS

±20

V

DC

(Note 1)

ID

−5

A

Drain current

Pulse(Note 1)

IDP

−20

A

Drain power dissipation

PD

20

W

Single pulse avalanche energy

(Note 2)

EAS

40.5

mJ

Avalanche current

IAR

−5

A

Repetitive avalenche energy (Note 3)

EAR

2

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch−c)

6.25

°C / W

Thermal resistance, channel to ambient

Rth (ch−a)

125

°C / W

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

2.3

1.1

± 0.2

0.9

0.6

± 0.15

5.2

± 0.2

2.3

0.6 MAX.

6.5

± 0.2

1

2

3

0.6 MAX.

0.6

± 0.15

0.8 MAX.

1.1 MAX.

1. GATE

2. DRAIN

（

HEAT SINK）

3. SOURSE

3

2

1

JEDEC

―

JEITA

―

TOSHIBA

2-7J2B

Weight: 0.36 g (typ.)

유사한 부품 번호 - 2SJ681

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SJ681	253Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
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