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2SK2961 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SK2961 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2961 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 −π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 2.0 Drain current Pulse (Note 1) IDP 6.0 A Drain power dissipation PD 0.9 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 138 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC TO-92MOD JEITA — TOSHIBA 2-5J1C Weight: 0.36 g (typ.) |
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