전자부품 데이터시트 검색엔진 |
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TPC8A01 데이터시트(PDF) 8 Page - Toshiba Semiconductor |
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TPC8A01 데이터시트(HTML) 8 Page - Toshiba Semiconductor |
8 / 12 page TPC8A01 2006-11-16 8 Q2(Includes Schottky Barrier Diode) ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 2.5 3 2.3 10 VGS=2.0V 3.5 6 4 8 2.6 2.4 2.1 2.2 Common source Ta = 25°C Pulse test 0 4 8 12 16 20 012 34 5 VGS=2.1V 2.8 3 2.7 2.6 10 2.4 4 8 6 2.5 2.3 2.2 Common source Ta = 25°C Pulse test 0 4 8 12 16 20 012 3 4 5 6 25 100 Ta=-55℃ Common source VDS = 10 V Pulse test 0 0.1 0.2 0.3 0.4 0.5 0.6 02 4 6 8 10 12 ID=8.5A 4.3 2.1 Common source Ta = 25°C Pulse test 0.1 1 10 100 0.1 1 10 100 Ta=-55℃ 100 25 Common source VDS = 10 V Pulse test 1 10 100 1000 0.1 1 10 100 VGS=4.5V VGS=10V Common source Ta = 25°C Pulse test |
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