전자부품 데이터시트 검색엔진 |
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TPC8208 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TPC8208 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8208 2006-11-16 5 RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) (1) (2) 0 0 50 100 150 200 0.5 1.0 1.5 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (4) (3) 0 −80 −40 0 40 80 120 160 20 40 60 80 100 Common source Pulse test 4 V VGS = 2.5 V ID = 5 A 2.5 A, 1.2 A ID = 5 A, .2.5 A, 1.2A 0.1 −0 −0.2 −0.4 −0.6 −0.8 −1 −1.4 1 10 100 −1.2 Common source Ta = 25°C Pulse test VGS = 0 V 1 3 5 10 0.1 1 10 100 100 1000 10000 Ciss Coss Crss Common source Ta = 25°C VGS = 0 V f = 1 MHz 0 −80 0.4 1.0 1.4 −40 0 40 80 120 160 0.2 0.6 0.8 1.2 Common source VDS = 10 V ID = 1 mA Pulse test 0 8 0 4 8 12 16 0 5 10 15 20 4 12 16 Common source ID = 5 A Ta = 25°C Pulse test VDS 20 8 VDD = 16 V 20 VDD = 16 V 8 4 4 |
유사한 부품 번호 - TPC8208_06 |
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유사한 설명 - TPC8208_06 |
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