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BD180G 데이터시트(PDF) 1 Page - ON Semiconductor |
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BD180G 데이터시트(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Publication Order Number: BD180/D BD180 Plastic Medium Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179 • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 30 240 W mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 4.16 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION BD180 TO−225 500 Units/Box 3.0 AMPERES POWER TRANSISTORS PNP SILICON 80 VOLTS, 30 WATTS http://onsemi.com BD180G TO−225 (Pb−Free) 500 Units/Box TO−225 CASE 77 STYLE 1 2 1 3 MARKING DIAGRAM YWW BD180G Y = Year WW = Work Week BD180 = Device Code G = Pb−Free Package |
유사한 부품 번호 - BD180G |
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유사한 설명 - BD180G |
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