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Z0109MNT1G 데이터시트(PDF) 1 Page - ON Semiconductor |
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Z0109MNT1G 데이터시트(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 3 1 Publication Order Number: Z0103MN/D Z0103MN, Z0107MN, Z0109MN Sensitive Gate Triac Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. Features • Sensitive Gate Trigger Current in Four Trigger Modes • Blocking Voltage to 600 V • Glass Passivated Surface for Reliability and Uniformity • Surface Mount Package • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, TJ = −40 to +125°C) VDRM, VRRM 600 V On−State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 1.0 A Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A Circuit Fusing Considerations (Pulse Width = 8.3 ms) I2t 0.4 A2s Average Gate Power (TC = 80°C, t v 8.3 ms) PG(AV) 1.0 W Peak Gate Current (t v 20 ms, TJ = +125°C) IGM 1.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Meas- ured on MT2 Tab Adjacent to Epoxy RqJT 25 °C/W Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum TL 260 °C TRIAC 1.0 AMPERE RMS 600 VOLTS MT1 G MT2 4 23 PIN ASSIGNMENT 1 2 3 Gate Main Terminal 1 Main Terminal 2 4 Main Terminal 2 http://onsemi.com SOT−223 CASE 318E STYLE 11 MARKING DIAGRAM AYW 10XMN G G A = Assembly Location Y = Year W = Work Week 10XMN = Device Code x = 3, 7, 9 G = Pb−Free Package (Note: Microdot may be in either location) 1 Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Z0103MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel Z0107MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel Z0109MNT1G SOT−223 (Pb−Free) 1000/Tape & Reel |
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