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TLP2451 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TLP2451
상세설명  Photocoupler GaA?밃s IRED Photo IC
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP2451 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TLP2451
2010-01-19
3
Electrical Characteristics (Ta = −40 to 125 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Forward voltage
VF
IF = 10 mA, Ta = 25 °C
1.40
1.57
1.80
V
Temperature coefficient of forward
voltage
∆VF/∆Ta
IF = 10 mA
−1.8
mV/°C
Input reverse current
IR
VR = 5 V, Ta = 25 °C
10
μA
Input capacitance
CT
V
=0 V, f = 1 MHz
60
pF
IOPH1
V8-6 = 4 V
−0.4
−0.2
“H” Level
IOPH2
1
VCC = 15 V
IF = 5 mA
V8-6 = 10 V
−0.4
IOPL1
V6-5 = 2 V
0.2
0.5
Output current
(Note 6)
“L” Level
IOPL2
2
VCC = 15 V
IF = 0 mA
V6-5 = 10 V
0.4
A
“H” Level
VOH
3
IO = −100 mA,
IF = 5 mA
6.0
8.5
Output voltage
“L” Level
VOL
4
VCC = 10 V
IO = 100 mA,
VF = 0.8 V
0.35
1.0
V
“H” Level
ICCH
5
IF = 10 mA
1.1
2.0
Supply current
“L” Level
ICCL
6
VCC = 10 to 30 V
VO=Open
IF = 0 mA
1.1
2.0
mA
Threshold input current
L
→ H
IFLH
VCC = 15 V, VO > 1 V
1.2
5
mA
Threshold input voltage
H
→ L
VFHL
VCC = 15 V, VO < 1 V
0.8
V
Supply voltage
VCC
10
30
V
*All typical values are at Ta=25°C, VCC=10 V unless otherwise specified
Note 6: Duration of Io time ≤ 50
μs, 1 pulse
Note 7: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design. It is therefore all the more necessary to observe general precautions regarding
ESD when handling this component.
Isolation Characteristics (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance input to output
CS
VS = 0 V , f = 1MHz
(Note 3)
0.8
pF
Isolation resistance
RS
R.H. ≤ 60 %, VS = 500 V (Note 3) 1×10
12
10
14
AC, 1 minute
3750
AC, 1 second, in oil
10000
V rms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc


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