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TPC8061-H 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TPC8061-H
상세설명  Silicon N-Channel MOS Type (U-MOS??H)
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8061-H 데이터시트(HTML) 5 Page - Toshiba Semiconductor

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TPC8061-H
2009-11-18
5
0
Ciss
Coss
Crss
VGS = 0 V
10
4.5
3
20
10
30
0
0
4
12
10
8
4
12
0
0.5
1
1.5
−80
−40
0
40
80
120
160
2
10
0.1
100
1000
10000
1
10
100
40
32
0
1
−0.2
10
100
−0.6
−0.8
−0.4
VDD = 6 V
VDS
12
24
1
2.5
6
VGS = 10 V
VGS = 4.5 V
160
−40
0
40
80
120
−80
24
16
ID = 2, 4, 8 A
0
−1.0
8
ID = 2, 4, 8 A
8
2
2
1.0
0
0
40
80
120
0.5
1.5
160
(1)
(2)
Drain-source voltage VDS (V)
Capacitance – VDS
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Ambient temperature Ta (°C)
RDS (ON) – Ta
Common source
Pulse test
Ambient temperature Ta (°C)
Vth – Ta
Common source
VDS = 10 V
ID = 0.1 mA
Pulse test
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
IDR – VDS
Common source
Ta
= 25°C
Pulse test
Common source
ID = 8 A
Ta
= 25°C
Pulse test
Ambient temperature Ta (°C)
PD – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
t=10s
VGS


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