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TPC8061-H 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TPC8061-H 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8061-H 2009-11-18 5 0 Ciss Coss Crss VGS = 0 V 10 4.5 3 20 10 30 0 0 4 12 10 8 4 12 0 0.5 1 1.5 −80 −40 0 40 80 120 160 2 10 0.1 100 1000 10000 1 10 100 40 32 0 1 −0.2 10 100 −0.6 −0.8 −0.4 VDD = 6 V VDS 12 24 1 2.5 6 VGS = 10 V VGS = 4.5 V 160 −40 0 40 80 120 −80 24 16 ID = 2, 4, 8 A 0 −1.0 8 ID = 2, 4, 8 A 8 2 2 1.0 0 0 40 80 120 0.5 1.5 160 (1) (2) Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Common source Pulse test Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 0.1 mA Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) IDR – VDS Common source Ta = 25°C Pulse test Common source ID = 8 A Ta = 25°C Pulse test Ambient temperature Ta (°C) PD – Ta (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) t=10s VGS |
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