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SSTUA32864EC 데이터시트(PDF) 9 Page - NXP Semiconductors

부품명 SSTUA32864EC
상세설명  1.8 V configurable registered buffer for DDR2-667 RDIMM applications
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SSTUA32864_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 9 March 2007
9 of 20
NXP Semiconductors
SSTUA32864
1.8 V configurable registered buffer for DDR2-667 RDIMM applications
10. Characteristics
Table 6.
Characteristics
Recommended operating conditions; Tamb =0 °Cto+70 °C; all voltages are referenced to GND (ground=0V);
unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VOH
HIGH-level output voltage
IOH = −6 mA; VDD = 1.7 V
1.2
-
-
V
VOL
LOW-level output voltage
IOL = 6 mA; VDD = 1.7 V
-
-
0.5
V
II
input current
all inputs; VI =VDD or GND; VDD = 2.0 V
−5-
+5
µA
IDD
supply current
static standby; RESET = GND; IO = 0 mA;
VDD = 2.0 V
--2
mA
static operating; RESET = VDD; IO = 0 mA;
VDD = 2.0 V; VI =VIH(AC) or VIL(AC)
-
-
40
mA
IDDD
dynamic operating current
per MHz
clock only; RESET = VDD;
VI =VIH(AC) or VIL(AC); CK and CK switching
at 50 % duty cycle. IO = 0 mA; VDD = 2.0 V
-16
-
µA
per each data input, 1 : 1 mode;
RESET = VDD; VI =VIH(AC) or VIL(AC);
CK and CK switching at 50 % duty cycle.
One data input switching at half clock
frequency, 50 % duty cycle. IO = 0 mA;
VDD = 2.0 V
-11
-
µA
per each data input, 1 : 2 mode;
RESET = VDD; VI =VIH(AC) or VIL(AC);
CK and CK switching at 50 % duty cycle.
One data input switching at half clock
frequency, 50 % duty cycle. IO = 0 mA;
VDD = 2.0 V
-19
-
µA
Ci
input capacitance
data inputs, CSR; VI =Vref ± 250 mV;
VDD = 1.8 V
2.5
-
3.5
pF
CK and CK; VICR = 0.9 V; VID = 600 mV;
VDD = 1.8 V
2-
3pF
RESET; VI =VDD or GND; VDD = 1.8 V
2
-
4
pF


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