전자부품 데이터시트 검색엔진 |
|
KM416C1000C 데이터시트(PDF) 1 Page - Samsung semiconductor |
|
KM416C1000C 데이터시트(HTML) 1 Page - Samsung semiconductor |
1 / 34 page KM416C1000C, KM416C1200C CMOS DRAM KM416V1000C, KM416V1200C This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con- sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS- before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. • Part Identification - KM416C1000C/C-L (5V, 4K Ref.) - KM416C1200C/C-L (5V, 1K Ref.) - KM416V1000C/C-L (3.3V, 4K Ref.) - KM416V1200C/C-L (3.3V, 1K Ref.) • Fast Page Mode operation • 2 CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • TTL(5V)/LVTTL(3.3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages • Single +5V ±10% power supply (5V product) • Single +3.3V ±0.3V power supply (3.3V product) Control Clocks VBB Generator Refresh Timer Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer Row Decoder Column Decoder Lower Data out Buffer RAS UCAS LCAS W Vcc Vss DQ0 to DQ7 A0-A11 (A0 - A9) *1 A0 - A7 (A0 - A9) *1 Memory Array 1,048,576 x16 Cells SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION FEATURES FUNCTIONAL BLOCK DIAGRAM • Refresh Cycles Part NO. VCC Refresh cycle Refresh period Normal L-ver C1000C 5V 4K 64ms 128ms V1000C 3.3V C1200C 5V 1K 16ms V1200C 3.3V • Perfomance Range Speed tRAC tCAC tRC tPC Remark -5 50ns 15ns 90ns 35ns 5V/3.3V -6 60ns 15ns 110ns 40ns 5V/3.3V • Active Power Dissipation Speed 3.3V 5V 4K 1K 4K 1K -5 324 504 495 770 -6 288 468 440 715 Unit : mW Upper Data in Buffer Upper Data out Buffer Lower Data in Buffer DQ8 to DQ15 OE Note) *1 : 1K Refresh |
유사한 부품 번호 - KM416C1000C |
|
유사한 설명 - KM416C1000C |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |