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KM681000BLG-5 데이터시트(PDF) 3 Page - Samsung semiconductor

부품명 KM681000BLG-5
상세설명  128K x8 bit Low Power CMOS Static RAM
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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PRELIMINARY
Revision 0.3
KM681000B Family
CMOS SRAM
April 1996
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stres s rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN,VOUT
-0.5 to 7.0
V
-
Voltage on Vcc supply relative to Vss
VCC
-0.5 to 7.0
V
-
Power Dissipation
PD
1.0
W
-
Storage temperature
TSTG
-65 to 150
¡É
-
Operating Temperature
TA
0 to 70
¡É
KM681000BL/L-L
-25 to 85
¡É
KM681000BLE/LE-L
-40 to 85
¡É
KM681000BLI/LI-L
Soldering temperature and time
TSOLDER
260¡É, 10sec (Lead Only)
-
-
RECOMMENDED DC OPERATING CONDITIONS*
* 1) Commercial Product : TA=0 to 70¡É, unless otherwise specified
2) Extended Product : TA=-25 to 85¡É, unless otherwise specified
3) Industrial Product : TA=-40 to 85¡É, unless otherwise specified
** TA=25¡É
*** VIL(min)=-3.0V for ¡Â 50ns pulse width
Item
Symbol
Min
Typ**
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.5
V
Input low voltage
VIL
-0.5***
-
0.8
V
CAPACITANCE* (f=1MHz, TA=25¡É)
* Capacitance is sampled not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
Vin=0V
-
6
pF
Input/Output capacitance
CIO
Vio=0V
-
8
pF


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