전자부품 데이터시트 검색엔진 |
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KM6164002 데이터시트(PDF) 6 Page - Samsung semiconductor |
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KM6164002 데이터시트(HTML) 6 Page - Samsung semiconductor |
6 / 9 page KM6164002, KM6164002E, KM6164002I CMOS SRAM PRELIMINARY Rev 2.0 - 4 - June -1997 TEST CONDITIONS NOTE: Above test conditions are also applied at extended and industrial temperature ranges . Parameter Value Input Pulse Levels 0V to 3V Input Rise and Fall Times 3§À Input and Output timing Reference Levels 1.5V Output Loads See below AC CHARACTERISTICS(TA=0 to 70 °C, VCC=5.0V±10%, unless otherwise noted.) READ CYCLE NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges. Parameter Symbol KM6164002-20 KM6164002-25 Unit Min Max Min Max Read Cycle Time tRC 20 - 25 - §À Address Access Time tAA - 20 - 25 §À Chip Select to Output tCO - 20 - 25 §À Output Enable to Valid Output tOE - 10 - 12 §À UB, LB Access Time tBA - 10 - 12 ns Chip Enable to Low-Z Output tLZ 5 - 5 - §À Output Enable to Low-Z Output tOLZ 0 - 0 - §À UB, LB Enable to Low-Z Output tBLZ 0 - 0 - ns Chip Disable to High-Z Output tHZ 0 7 0 8 §À Output Disable to High-Z Output tOHZ 0 7 0 8 §À UB, LB Disable to High-Z Output tBHZ 0 7 0 8 ns Output Hold from Address Change tOH 4 - 5 - §À Output Loads(A) Output Loads(B) DOUT 5pF* 480 Ω 255 Ω for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5.0V DOUT 30pF* 480 Ω 255 Ω +5.0V * Including Scope and Jig Capacitance |
유사한 부품 번호 - KM6164002 |
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유사한 설명 - KM6164002 |
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