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KM684002I-17 데이터시트(PDF) 6 Page - Samsung semiconductor

부품명 KM684002I-17
상세설명  512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM684002I-17 데이터시트(HTML) 6 Page - Samsung semiconductor

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KM684002, KM684002E, KM684002I
CMOS SRAM
PRELIMINARY
Rev 3.0
- 6 -
June -1997
TIMING WAVE FORM OF READ CYCLE(2)(WE=VIH)
CS
OE
Data Out
ADD
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or VOL Levels.
4. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ (Min.) both for a given device and from device to device.
5. Transition is measured
±200§Æ from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
TIMING WAVE FORM OF WRITE CYCLE(1)(OE=Clock)
OE
CS
Data In
WE
High-Z
ADD
Data Out
Data Valid
High-Z(8)
50%
50%
Vcc
Current
Data Valid
Icc
ISB
tRC
tAA
tCO
tOLZ
tOE
tPU
tLZ(4,5)
tHZ(3,4,5)
tOHZ
tOH
tPD
tWC
tAW
tWP(2)
tCW(3)
tAS(4)
tOHZ(6)
tDW
tDH
tWR(5)


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