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| 2SD2557 |
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156 Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB 2SD2557 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ Unit µA mA V V MHz pF Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f=1MHz Darlington 2SD2557 (Ta=25°C) (Ta=25°C) I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) h FE– I C Temperature Characteristics (Typical) θj-a–t Characteristics I C– V BE Temperature Characteristics (Typical) V CE(sat) – I B Characteristics (Typical) Safe Operating Area (Single Pulse) f T– I E Characteristics (Typical) 0 5 4 2 1 3 0 2.5 2 1 Base-Emittor Voltage V BE(V) (V CE=4V) 10ms 50ms 10 50 5 100 300 0.05 0.1 1 0.5 10 30 5 Collector-Emitter Voltage V CE(V) 100ms (V CE=5V) 0.02 0.1 5 1 0.5 Collector Current I C(A) 1000 500 5 10 100 50 5000 8000 Pc – T a Derating 70 60 50 40 30 20 10 3.5 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) Without Heatsink 125˚C 25˚C –30˚C Without Heatsink Natural Cooling 0.3 0.5 5.0 1.0 11 0 5 100 50 2000 1000 500 Time t(ms) 0 0 1 2 4 3 5 26 4 Collector-Emitter Voltage V CE(V) 250mA 50mA 10mA 2.5mA 1.2mA 0.6mA 0.3mA External Dimensions MT-100(TO3P) 15.6±0.4 9.6 ø3.2±0.1 2 3 1.05 +0.2 -0.1 BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65 +0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Type No. b. Lot No. B C E (3.2k Ω)(450Ω) Equivalent circuit |
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