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PIC18F2X 데이터시트(PDF) 100 Page - Microchip Technology |
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PIC18F2X 데이터시트(HTML) 100 Page - Microchip Technology |
100 / 496 page PIC18(L)F2X/4XK22 DS41412C-page 100 Preliminary 2010 Microchip Technology Inc. 6.4 Erasing Flash Program Memory The minimum erase block is 32 words or 64 bytes. Only through the use of an external programmer, or through ICSP™ control, can larger blocks of program memory be bulk erased. Word erase in the Flash array is not supported. When initiating an erase sequence from the microcontroller itself, a block of 64 bytes of program memory is erased. The Most Significant 16 bits of the TBLPTR<21:6> point to the block being erased. The TBLPTR<5:0> bits are ignored. The EECON1 register commands the erase operation. The EEPGD bit must be set to point to the Flash program memory. The WREN bit must be set to enable write operations. The FREE bit is set to select an erase operation. The write initiate sequence for EECON2, shown as steps 4 through 6 in Section 6.4.1 “Flash Program Memory Erase Sequence”, is used to guard against accidental writes. This is sometimes referred to as a long write. A long write is necessary for erasing the internal Flash. Instruction execution is halted during the long write cycle. The long write is terminated by the internal programming timer. 6.4.1 FLASH PROGRAM MEMORY ERASE SEQUENCE The sequence of events for erasing a block of internal program memory is: 1. Load Table Pointer register with address of block being erased. 2. Set the EECON1 register for the erase operation: • set EEPGD bit to point to program memory; • clear the CFGS bit to access program memory; • set WREN bit to enable writes; • set FREE bit to enable the erase. 3. Disable interrupts. 4. Write 55h to EECON2. 5. Write 0AAh to EECON2. 6. Set the WR bit. This will begin the block erase cycle. 7. The CPU will stall for duration of the erase (about 2 ms using internal timer). 8. Re-enable interrupts. EXAMPLE 6-2: ERASING A FLASH PROGRAM MEMORY BLOCK MOVLW CODE_ADDR_UPPER ; load TBLPTR with the base MOVWF TBLPTRU ; address of the memory block MOVLW CODE_ADDR_HIGH MOVWF TBLPTRH MOVLW CODE_ADDR_LOW MOVWF TBLPTRL ERASE_BLOCK BSF EECON1, EEPGD ; point to Flash program memory BCF EECON1, CFGS ; access Flash program memory BSF EECON1, WREN ; enable write to memory BSF EECON1, FREE ; enable block Erase operation BCF INTCON, GIE ; disable interrupts Required MOVLW 55h Sequence MOVWF EECON2 ; write 55h MOVLW 0AAh MOVWF EECON2 ; write 0AAh BSF EECON1, WR ; start erase (CPU stall) BSF INTCON, GIE ; re-enable interrupts |
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