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74LVC2G66GDV66 데이터시트(PDF) 10 Page - NXP Semiconductors

부품명 74LVC2G66GDV66
상세설명  Bilateral switch
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74LVC2G66
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 16 June 2010
10 of 26
NXP Semiconductors
74LVC2G66
Bilateral switch
11. Dynamic characteristics
[1]
Typical values are measured at Tamb =25 °C and nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
Propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified capacitance when
driven by an ideal voltage source (zero output impedance).
[4]
ten is the same as tPZH and tPZL.
[5]
tdis is the same as tPLZ and tPHZ.
[6]
CPD is used to determine the dynamic power dissipation (PD in μW).
PD =CPD × VCC2 × fi × N+ Σ{(CL +CS(ON)) × VCC2 × fo} where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS(ON) = maximum ON-state switch capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 19.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
nY to nZ or nZ to nY;
see Figure 17
[2][3]
VCC = 1.65 V to 1.95 V
-
0.8
2.0
-
3.0
ns
VCC = 2.3 V to 2.7 V
-
0.4
1.2
-
2.0
ns
VCC = 2.7 V
-
0.4
1.0
-
1.5
ns
VCC = 3.0 V to 3.6 V
-
0.3
0.8
-
1.5
ns
VCC = 4.5 V to 5.5 V
-
0.2
0.6
-
1.0
ns
ten
enable time
nE to nY or nZ;
see Figure 18
[4]
VCC = 1.65 V to 1.95 V
1.0
4.6
10
1.0
13.0
ns
VCC = 2.3 V to 2.7 V
1.0
2.7
5.6
1.0
7.5
ns
VCC = 2.7 V
1.0
2.7
5.0
1.0
6.5
ns
VCC = 3.0 V to 3.6 V
1.0
2.4
4.4
1.0
6.0
ns
VCC = 4.5 V to 5.5 V
1.0
1.8
3.9
1.0
5.0
ns
tdis
disable time
nE to nY or nZ; see
Figure 18
[5]
VCC = 1.65 V to 1.95 V
1.0
3.8
9.0
1.0
11.5
ns
VCC = 2.3 V to 2.7 V
1.0
2.1
5.5
1.0
7.0
ns
VCC = 2.7 V
1.0
3.5
6.5
1.0
8.5
ns
VCC = 3.0 V to 3.6 V
1.0
3.0
6.0
1.0
8.0
ns
VCC = 4.5 V to 5.5 V
1.0
2.2
5.0
1.0
6.5
ns
CPD
power dissipation
capacitance
CL =50pF; fi =10MHz;
VI =GND to VCC
[6]
VCC = 2.5 V
-
9.0
-
-
-
pF
VCC = 3.3 V
-
11.0
--
-pF
VCC = 5.0 V
-
15.7
--
-pF


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