©2009 Silicon Storage Technology, Inc.

S71327-03-000

05/09

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single Voltage Read and Write Operations

– 2.7-3.6V

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

High Speed Clock Frequency

– 80 MHz Max

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

•

Auto Address Increment (AAI) Word Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Industrial: -40°C to +85°C

•

Packages Available

– 8-lead SOIC (200 mils)

– 8-contact WSON (5 X 6 mm)

•

All devices are RoHS compliant

PRODUCT DESCRIPTION

The SST 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. SST25VF032B SPI serial flash

memories are manufactured with SST’s proprietary, high-

performance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches.

The SST25VF032B devices significantly improve perfor-

mance and reliability, while lowering power consumption.

The devices write (Program or Erase) with a single power

supply of 2.7-3.6V for SST25VF032B. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

The SST25VF032B device is offered in 8-lead SOIC (200

mils) and 8-contact WSON packages. See Figure 2 for pin

assignments.

32 Mbit SPI Serial Flash

SST25VF032B

SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory